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www.irf.com 1 03/09/05 IRF6691 hexfet power mosfet plus schottky diode notes through are on page 10 directfet isometric application specific mosfets integrates monolithic trench schottky diode ideal for cpu core dc-dc converters low conduction losses low reverse recovery losses low switching losses low reverse recovery charge and low vf low profile (<0.7 mm) dual sided cooling compatible compatible with existing surface mount techniques description
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;,,& applicable directfet package/layout pad (see p.8,9 for details) sq sx st mq mx mt v dss r ds(on) max qg(typ.) 20v 2.5m ? @v gs = 4.5v 47nc 1.8m ? @v gs = 10v absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t a = 25c continuous drain current, v gs @ 10v a i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation w p d @t c = 25c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 45 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case ??? 1.4 r j-pcb junction-to-pcb mounted 1.0 ??? -40 to + 150 2.8 0.022 1.8 89 max. 32 26 260 12 20 180

2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 20 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ???12???mv/c r ds(on) static drain-to-source on-resistance ??? 1.8 2.5 m ? ??? 1.2 1.8 v gs(th) gate threshold voltage 1.6 ??? 2.5 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -4.1 ??? mv/c ??? ??? 1.4 ma i dss drain-to-source leakage current ??? ??? 500 a ??? ??? 5 ma i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 110 ??? ??? s q g total gate charge ??? 47 71 q gs1 pre-vth gate-to-source charge ???14??? q gs2 post-vth gate-to-source charge ??? 4.4 ??? nc q gd gate-to-drain charge ???15??? q godr gate charge overdrive ??? 14 ??? see fig. 17 q sw switch charge (q gs2 + q gd ) ???19??? q oss output charge ???30???nc r g gate resistance ??? 0.60 1.5 ? t d(on) turn-on delay time ???23??? t r rise time ???95???ns t d(off) turn-off delay time ???25??? t f fall time ???10??? c iss input capacitance ???6580??? c oss output capacitance ??? 2070 ??? pf c rss reverse transfer capacitance ??? 840 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener gy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 32 (body diode) a i sm pulsed source current ??? ??? 260 (body diode) v sd diode forward voltage ??? ??? 0.65 v t rr reverse recovery time ??? 32 48 ns q rr reverse recovery charge ??? 26 39 nc mosfet symbol clamped inductive load v ds = 10v, i d = 26a conditions ? = 1.0mhz v ds = 10v, v gs = 0v v dd = 16v, v gs = 4.5v v ds = 10v v ds = 16v, v gs = 0v, t j = 125c v gs = 12v v gs = -12v v gs = 4.5v i d = 10ma, reference to 25c v ds = v gs , i d = 250a v ds = 16v, v gs = 0v conditions v gs = 0v, i d = 1.0ma reference to 25c, i d = 10ma v gs = 4.5v, i d = 12a v gs = 10v, i d = 15a v ds = 20v, v gs = 0v t j = 25c, i f = 25a di/dt = 100a/s t j = 25c, i s = 25a, v gs = 0v showing the integral reverse p-n junction diode. typ. ??? ??? i d = 17a v gs = 0v v ds = 10v i d = 26a 230 26 max.
www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.2v 2.9v bottom 2.7v 60s pulse width tj = 25c 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 60s pulse width tj = 150c vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.2v 2.9v bottom 2.7v 1 2 3 4 5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 10v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 32a v gs = 10v
4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 102030405060 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v i d = 17a 0 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100sec t a = 25c tj = 150c single pulse 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10. threshold voltage vs. temperature fig 9. maximum drain current vs. case temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.678 0.000860 17.30 0.577560 17.57 8.940000 9.470 106.0000 25 50 75 100 125 150 t c , case temperature (c) 0 25 50 75 100 125 150 175 200 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a
6 www.irf.com fig 13c. maximum avalanche energy vs. drain current fig 14a. switching time test circuit fig 14b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - fig 13b. unclamped inductive waveforms fig 13a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 12. on-resistance vs. gate voltage 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 12a 15a bottom 26a 2 3 4 5 6 7 8 9 10 v gs, gate -to -source voltage (v) 0 1 2 3 4 5 6 7 8 9 10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 32a t j = 25c t j = 125c
www.irf.com 7 d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 16. gate charge test circuit fig 15. for n-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period 3 <13$==,, + - + + + - - - 3 ?
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8 www.irf.com directfet outline dimension, mt outline (medium size can, t-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. code a b c d e f g h j k l m n p min 6.25 4.80 3.85 0.35 0.78 0.88 1.78 0.98 0.63 o.88 2.46 0.59 0.03 0.08 max 6.35 5.05 3.95 0.45 0.82 0.92 1.82 1.02 0.67 1.01 2.63 0.70 0.08 0.17 min 0.246 0.189 0.152 0.014 0.031 0.035 0.070 0.039 0.025 0.035 0.097 0.023 0.001 0.003 max 0.250 0.199 0.156 0.018 0.032 0.036 0.072 0.040 0.026 0.039 0.104 0.028 0.003 0.007 dimensions metric imperial note: controlling dimensions are in mm
www.irf.com 9 directfet board footprint, mt outline (medium size can, t-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs.
10 www.irf.com directfet tape & reel dimension (showing component orientation). metric min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 imperial standard option (qty 4800) note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as IRF6691). for 1000 parts on 7" reel, order IRF6691tr1 metric imperial tr1 option (qty 1000) min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 0.50 n.c n.c 0.53 n.c n.c reel dimensions
www.irf.com 11 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/05 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.72mh, r g = 25 ? , i as = 26a. pulse width 400s; duty cycle 2%. surface mounted on 1 in. square cu board.
used double sided cooling , mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink. t c measured with thermal couple mounted to top (drain) of part. r is measured at t j of approximately 90c. directfet part marking

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